Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures
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چکیده
منابع مشابه
مشخصهیابی ساختارهای دورآلائیده وارون p-Si/SiGe/Si با روشهای پرتو X و الکتریکی
In this work, the epitaxially grown, lattice–matched p-Si/Si1-xGex/Si inverted remote doped structures have been characterized using X-ray and electrical techniques. The Si cup layer thickness () and Ge content (x) have been determined from computer simulation of intensity and angular sepration of (004) peaks observed in the X-ray diffraction pattern due to misorientaion of corresponding Bragg ...
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